STC6602 dual n&p channel enhancement mode mosfet 2.8a/-2.8a stanson technology 120 bentley square, mount ain view, ca 94040 usa http://www.stansontech.com STC6602 2007. v1 description the STC6602 is the dual n&p-channel enhancem ent mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-st ate resistance. these devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. pin configuration tsop-6 y: year a: week code ordering information part number package part marking STC6602st6rg tsop-6 02yw week code code : a ~ z ; a ~ z STC6602st6rg st6 : tsop-6; r: tape reel ; g: pb ? free feature 02yw d1 s1 d2 g1 s2 g2
STC6602 dual n&p channel enhancement mode mosfet 2.8a/-2.8a stanson technology 120 bentley square, mount ain view, ca 94040 usa http://www.stansontech.com STC6602 2007. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) typical parameter symbol n p unit drain-source voltage v dss 30 -30 v gate-source voltage v gss 20 20 v t a =25 2.8 -2.8 continuous drain current (t j =150 ) t a =70 i d 2.3 -2.1 a pulsed drain current i dm 10 -8 a continuous source curre nt (diode conduction) i s 1.25 -1.4 a t a =25 1.15 power dissipation t a =70 p d 0.75 w operation junction temperature t j -55/150 storage temperature range t stg -55/150 t Q 10sec 50 52 thermal resistance-junction to ambient steady state r ja 90 90 /w
STC6602 dual n&p channel enhancement mode mosfet 2.8a/-2.8a stanson technology 120 bentley square, mount ain view, ca 94040 usa http://www.stansontech.com STC6602 2007. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua v gs =0v,i d =-250ua n p 30 -30 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua v ds =vgs,i d =-250ua n p 1 1 3 -3 v gate leakage current i gss v ds =0v,v gs = 20v n p 100 100 na v ds =30v,v gs =0v v ds =-30v,v gs =0v n p 1 -1 zero gate voltage drain current i dss v ds =30v,v gs =0v t j =55 v ds =-30v,v gs =0v t j =55 n p 10 -10 ua on-state drain current i d(on) v ds Q 5v,v gs =10v v ds Q -5v,v gs =-10v 6 -6 a v gs =10v,i d =2.8a v gs =-10v,i d =-2.8a 0.043 0.088 0.060 0.105 drain-source on-resistance r ds(on) v gs =4.5v,i d =2.3a v gs =-4.5v,i d =-2.5a 0.056 0.118 0.080 0.135 forward transconductance g fs v ds =10v,i d =2.8a v ds =-10v,i d =-2.8a 4.6 -4 s diode forward voltage v sd i s =1.25a,v gs =0v i s =-1.2a,v gs =0v 0.8 -0.8 1.2 -1.2 v dynamic total gate charge q g 4.5 5.8 10 10 gate-source charge q gs n p 0.8 0.8 gate-drain charge q gd n p 1.0 1.5 nc t d(on) n p 8 9 20 20 turn-on time t r n p 12 9 30 20 t d(off) n p 17 18 35 35 turn-off time t f n-channel v dd =15v, r l =10 , v gen =10v, r g =3 p-channel v dd =-15v, r l =15 , v gen =-10v, r g =3 n p 8 6 20 20 ns n-channel v ds =15v,v gs =4.5v, v ds =2.0a p-channel v ds =-15v,v gs =-4.5v, v d s =-2.0a n p
STC6602 dual n&p channel enhancement mode mosfet 2.8a/-2.8a stanson technology 120 bentley square, mount ain view, ca 94040 usa http://www.stansontech.com STC6602 2007. v1 typical characterictics ( n-channel )
STC6602 dual n&p channel enhancement mode mosfet 2.8a/-2.8a stanson technology 120 bentley square, mount ain view, ca 94040 usa http://www.stansontech.com STC6602 2007. v1 typical characterictics ( n-channel )
STC6602 dual n&p channel enhancement mode mosfet 2.8a/-2.8a stanson technology 120 bentley square, mount ain view, ca 94040 usa http://www.stansontech.com STC6602 2007. v1 typical characterictics ( p-channel )
STC6602 dual n&p channel enhancement mode mosfet 2.8a/-2.8a stanson technology 120 bentley square, mount ain view, ca 94040 usa http://www.stansontech.com STC6602 2007. v1 typical characterictics ( p-channel )
STC6602 dual n&p channel enhancement mode mosfet 2.8a/-2.8a stanson technology 120 bentley square, mount ain view, ca 94040 usa http://www.stansontech.com STC6602 2007. v1 tsop-6 package outline
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